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datasheet rev. 1.1, 2011-04-13 automotive BTS50060-1TEA smart high-side power switch one channel high current profet tm
datasheet 2 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.3 definition of terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1 power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.1 switching a resisitve load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.2 switching an inductive load - infineon? smart clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.1.3 switching a capacitive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.4 inverse load current operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.1 protection by over current shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.3.2 protection by over temperature shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.3.3 infineon? intelligent latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.3.4 reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.3.5 protection during loss of ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.6 protection during loss of load or loss of v s condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.3.7 protection during esd or over voltag e condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.4 diagnosis functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.1 sense output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.2 enhancing accuracy of the sense output by end of line calibration . . . . . . . . . . . . . . . . . . . . . . . 21 5.4.3 short-to-battery detection / open load detection in off st ate . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.5 undervoltage shutdown & restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6 electrical characteristics BTS50060-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.1 electrical characteristics table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 6.2 parameter dependencies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.2.1 power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.2.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 6.2.3 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6.2.4 diagnosis functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 7 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 7.1 further application informat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 8 package outlines and parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
pg-to252-5-311 type package marking BTS50060-1TEA pg-to252-5-311 s50060a datasheet 3 rev. 1.1, 2011-04-13 high current profet tm smart high-side power switch one channel BTS50060-1TEA 1overview application ? all types of resistive, in ductive and capacitive loads ? most suitable for driving loads with pwm frequency from 0 hz (dc operation) up to 1khz and above ? drives loads with high inrush current, e.g. ptc heaters ? replaces electromechanical relays, fuses and discrete circuits features ? reduced switching losses ? optimized for emc - low emission, high immunity ? optimized for pwm frequencies of approx. 100hz ? 3.3v and 5v compatible logic inputs ? advanced analog load current sense signal supporting easy calibration for very high accuracy ? embedded diagnosis features (e.g. open load detection at on and off) ? embedded protection functions (e.g. over current shutdown, over temperature shutdown) ?infineon ? intelligent latch ? green product (rohs compliant) ? aec qualified description embedded in a pg-to252-5-311 package, the BTS50060-1TEA is a 6m ? single channel smart high-side power switch. it is based on smart power chip on chip technology with a p-channel vertical power mosfet, providing protective and diagnostic func tions. it is specially designed to drive loads in the harsh automotive environment. table 1 product summary parameter symbol values range of typical pwm frequencies f pwm 0 hz ... 1 khz maximum on-state resistance at t j = 150 c r ds(on)_150 12 m ? nominal supply voltage range for operation v s(nom) 6 v ? 19 v nominal load current (dc operation) i l(nom) 16.5 a typical load current at 100hz i l(100hz) 13.5 a typical stand-by current at t j = 25 c i s(off) 5 a minimum short circuit current shutdown threshold i l(sc) 60 a maximum reverse battery voltage - v s(rev) 16 v
datasheet 4 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA block diagram embedded protection functions ?infineon ? intelligent latch - resettable latch resulting from protective switch off ? over current protection by short-circuit shutdown ? overload protection by over-temperature shutdown ?infineon ? smart clamping embedded diagnosis functions ? advanced analog load current sense signal with defined positive offset current; enabling load diagnosis, e.g. open load at on, overload ? providing defined fault signal ? open load at off detection ? short-to-battery detection 2 block diagram figure 1 block diagram of BTS50060-1TEA for a diagram of diagnosis & protection block , please see figure 14 . esd + over voltage protection blockdiagram.emf vs out in gnd is diagnosis & protection sense output input circuit r in temp gate driver smart clamping a
datasheet 5 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA pin configuration 3 pin configuration 3.1 pin assignment figure 2 pin configuration 3.2 pin definitions and functions 3.3 definition of terms figure 3 shows all terms used for currents and voltages in th is data sheet, with associated convention for positive values. figure 3 definition of currents and voltages pin symbol function 1gnd ground; ground connection for control chip. 2in input; digital 3.3 v and 5 v compatible logic i nput; activates power switch if set to high level; includes inte rnal pull-down resistor r in . tab; 3 1) 1) tab and pin 3 are internally connected. pin 3 is cut. out output; protected high side power output 4is sense; provides analog sense current signal and defined fault signal. 5vs supply voltage; positive supply voltage for logic and power stage 2) 2) pcb traces have to be designed to withstand maximum current occuring in the application. pinconfiguration .emf 1 2 3 4 5 gnd (out) in is v s out (tab) terms.emf v in out v s v out i s in v s i in i gnd gnd is i is i l v sis v is v sd
datasheet 6 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics 4 general product characteristics 4.1 absolute maximum ratings table 2 absolute maximum ratings 1) t j = -40c to 150c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. t y p . max. supply voltages supply voltage v s -0.3 28 v ? p_4.1 reverse polarity voltage on pin gnd, is |- v s(rev) |0 16v 2) , 3) p_4.2 supply voltage for short circuit protection v bat(sc) 028v 4) r ecu = 20m ?, r cable = 6m ? /m, l cable = 1h/m, l = 0 or 5m, see chapter 5.3.1 p_4.3 supply voltage for load dump protection v s(ld) ?45v r i = 2 ? 5) , r l = 1.0 ? , t d = 400ms p_4.4 short circuit capability short circuit cycle capability n rsc1 ?1 e6 (grade a) ? 4)6) p_4.21 in + is + gnd pin voltage at in pin v in -0.3 6 v ? p_4.5 current through in pin i in -2 2 ma t < 2min p_4.6 voltage at is pin v is -0.3 v s v ? p_4.7 current through is pin i is -2 10 ma ? p_4.8 current through gnd pin i gnd -2 10 ma ? p_4.9 power stage load current i l - i l(sc) i l(sc) a ? p_4.10 maximum energy dissipation for switching off an inductive load - single pulse e as ?280mj v s = 13.5v i l(0) = 20a t j(0) = 150c see figure 4 and chapter 5.1.2 p_4.11 maximum energy dissipation for switching off an inductive load - repetitive pulse e ar ?82mj v s = 13.5v i l(0) = 20a t j(0) = 105c see figure 4 and chapter 5.1.2 p_4.13 temperatures junction temperature t j -40 150 c ? p_4.14
datasheet 7 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics dynamic temperature increase while switching ? t j ? 60 k ? p_4.15 storage temperature t stg -55 150 c ? p_4.16 esd susceptibility esd resistivity hbm all pins to gnd v esd1 -2 2 kv hbm 7) p_4.17 esd resistivity hbm v s vs. gnd, v s vs. out, out vs. gnd v esd2 -4 4 kv hbm 7) p_4.18 esd resistivity cdm all pins to gnd v esd3 -500 500 v cdm 8) p_4.19 esd resistivity cdm corner pins v esd4 -750 750 v cdm 8) p_4.20 1) not subject to production test, specified by design. 2) in case of reverse polarity voltage on pin in, i in needs to be limited (see p_ 4.6) by external resistor r input , see figure 53 . 3) in case of reverse polarity voltage, current through the out pin needs to be limited by external circuitry to prevent over heating (see p_4.14). power dissipation during re verse polarity voltage can be calculated by equation (3) . please note, build-in protection functions are not avai lable during reverse polarity condition. 4) in accordance to aec q100-012 and aec q101-006. 5) v s(ld) is setup without the dut connect ed to the generator per iso 7637-1. 6) test aborted after 1 e6 cycles. 7) esd susceptibility, hbm acco rding to eia/jesd 22-a114b 8) esd susceptibility, charged device model ?cdm? eia/jesd22-c101 or esda stm5.3.1 table 2 absolute maximum ratings (cont?d) 1) t j = -40c to 150c ; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. t y p . max.
datasheet 8 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics figure 4 maximum energy dissipation fo r switching off an inductive load e a vs. load current notes 1. stresses above the ones listed here may cause perma nent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. integrated protection func tions are designed to prevent ic destructi on under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. pr otection functi ons are not designed for continuous repetitive operation. 1 10 100 1000 10 100 i l(0) [a] e a [mj] e_ar (tj(0) = 105c) e_as (tj(0) = 150c)
datasheet 9 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics 4.2 functional range figure 5 overview of functional ranges note: within the functional or operating range, the ic operat es as described in the circuit description. the electrical characteristics are specif ied within the conditions given in th e electrical char acteristics table. table 3 functional range parameter symbol values unit note / test condition number min. t y p . max. nominal supply voltage range for operation v s(nom) 6 19 v ? p_4.23 extended supply voltage range for operation v s(ext) v s(uv)on 28 v 1)2) 1) see chapter 5.5 , undervoltage turn on voltage and undervoltage turn off voltage 2) in extended supply voltage range, the device is functi onal but electrical parameters are not specified. p_4.24 extended supply voltage range for short dynamic undervoltage swings v s(dyn) v s(uv)off v s(uv)on v 1)2)3) 3) operation only if supply voltage was in range of v s(ext) before undervoltage swing. othe rwise, device will stay off. p_4.25 junction temperature t j -40 150 c ? p_4.26 v s v s(uv)off v s(uv)on 6v 19v 28v v s(nom) v s(ext) v s(dyn) functionalrange.emf 13.5v
datasheet 10 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics 4.3 thermal resistance note: this thermal data was generated in accordance wit h jedec jesd51 standards. fo r more information, go to www.jedec.org . figure 6 and figure 7 are showing the typical thermal impedance of BTS50060-1TEA mounted according to jedec jesd51-2,-5,-7 at natural c onvection on fr4 1s and 2s2p boar d. the product (chip + package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2x 70m cu, 2 x 35m cu). where applicable, a thermal via array under the exposed pad co ntacted the first inner copper layer. the pcb layer structure is shown in figure 8 . the pcb layout is shown in figure 9 . table 4 thermal resistance parameter symbol values unit note / test condition number min. typ. max. thermal resistance - junction to case r thjc 1) 1) not subject to production test, specified by design. ? 1 1.1 k/w ? p_4.27 thermal resistance - junction to ambient - 2s2p r thja_2s2p 1) ?22?k/w 2) 2) specified r thja value is according to jedec jesd51-2,-5,-7 at na tural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 114.3 1.5 mm board with 2 inner copper layers (2 70 mm cu, 2 35 mm cu). where applicable a thermal via array under the exposed pad contacted the first inner copper layer. p_4.29 figure 6 typical transient thermal impedance z th(ja) = f( t p ) for different cooling areas figure 7 typical transient thermal impedance z th(ja) = f( t p ) for pwm operation with duty cycles d = t / t period on a 2s2p pcb
datasheet 11 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA general product characteristics figure 8 cross section of 1s and 2s2p pcb used for z thja simulation figure 9 front view of pcb layout used for z thja simulation 1.5mm 70m 35m 0.3mm pcb 2s2p.emf 2s2p pcb 1.5mm 70m pcb 1s.emf 1s pcb 600mm2 300mm2 min pcb front.emf
datasheet 12 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description 5 functional description 5.1 power stage the power stage is built by a p-channel vertical power mosfet (dmos). the on-state resistance r ds(on) depends on the supply voltage v s as well as the junction temperature t j . figure 25 shows the dependencies for the typical on-state resistance. the behav ior in reverse polarity is described in chapter 5.3.4 . a high signal at the input pin (see chapter 5.2 ) causes the power dmos to switch on. a low signal at the input pin causes the power dmos to switch off. 5.1.1 switching a resisitve load defined slew rates for turn on and off as well as edg e shaping support pwm?ing of the load while achieving lowest emc emission at minimum switching losses. figure 10 shows the typical timing when switching a resistive load. figure 10 switching a resistive load 5.1.2 switching an inductive load - infineon ? smart clamping when switching off inductive loads, the output voltage v out drops below ground potential due to the involved inductance ( -d i l /dt = - v l /l ; - v out ? - v l ). to prevent the destruction of the de vice due to high voltages, there is a switchingresistiveload.emf v out t v in t on t off (d v/ d t ) on (d v/ d t ) off t r t f v in(h),min v in(l),max t i l t p loss t e on e off 10% v s 30% v s 70% v s 90% v s
datasheet 13 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description voltage clamp mechanism implemented that keeps th e negative output voltag e at a certain level (- v out = v s - v sd(cl) ). please refer to figure 1 and figure 11 for details. figure 11 switching an inductance nevertheless, the energy capability of the device is limited because t he energy is co nverted into heat. that?s why the maximum allowed load inductance is limited as well. please see figure 4 for limitations of energy and load inductance. for calculating the demagnization energy, equation (1) may be used: (1) the equation can be simplified under the assumption of r l = 0 ? to: (2) the BTS50060-1TEA provides infineon ? smart clamping functionality. to optimize the energy capability for single and parallel operation, the clamp voltage v sd(cl) increases over the junction temperature t j and load current i l . figure 36 shows the dependency from t j for the typical v sd(cl) . please refer also to figure 14 . 5.1.3 switching a capacitive load a capacitive load?s dominant characterist ic is it?s inrush current. the BTS50060-1TEA can support inrush currents up to i l(sc) . if the inrush current reaches i l(sc) , the device may detect a short circuit and switch off. for a description of the short circuit prot ection mechanism, please refer to chapter 5.3.1 . 5.1.4 inverse load current operation in case of a negative load current, e.g. caused by a load operating as a generator, the device can not block the current flowing through the intrinsic body diode. see figure 12 . the power stage of the device can be switched on or stays on as long as v in = high, reaching the same r ds(on) as for positive load currents, if no fault condition is detected. in case of fault condition, the logic of the device will switch off the power stage and supply a fault signal i is(fault) . since the device can not block negative load curren ts (even under fault conditions), it can not protect itself from overload condition. in the application, overload conditions, e.g. over temperature, must not occur during inverse load current operation. v out switchinginductance .e mf t i l t v s on off v sd(cl) e a v s dcl () l r l ------ v s v s dcl () ? r l -------------------------------- 1 r l i l v sd cl () v s ? ---------------------------------- + ?? ?? ln i l + = e a 1 2 -- - li l 2 v s dcl () v s dcl () v s ? -------------------------------- =
datasheet 14 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description figure 12 inverse load current operation 5.2 input circuit the input circuitry is compatible wit h 3.3 and 5v micro controllers. if v in is set to v in = v in(h) ( v in = high), the device will turn on. see figure 10 for the timings. if v in is set to v in = v in(l) ( v in = low), the power stage of the device will be turned of f. the input circuitr y has a hysteresis ? v in . the input circuitry is compatible with pwm applications. figure 13 shows the electrical equivalent input circ uitry. the logic of the BTS50060-1TEA stays active for a delay time t reset after the switch off signal. figure 13 input pin circuitry applying an input voltage of v in > 20v (absolute maximum ratings exce eded!) may force the BTS50060-1TEA to deactivate parts of the logic circuitry. this includes the undervoltage shutdo wn, the undervoltage restart delay, and the analog sense function. in this case, also the short circuit shutdown threshold i l(sc) is set to typically 50a, and the latch reset time t reset is reduced to typically 200s. to rese t this behavior, set input voltage to v in = low for t>300s. load gnd logic invers.emf v s out g - i l(inv) in gnd r in inputcircuitry.emf
datasheet 15 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description 5.3 protection functions the BTS50060-1TEA provides embedded protective functi ons. integrated protection functions are designed to prevent the destruction of the ic from fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functi ons are designed for neither continuous nor repetitive operation. in case of overload, high inrush currents, or short circ uit to ground, the BTS50060-1TEA offers several protection mechanisms. figure 14 describes the functionality of the diagnosis and protection block. figure 14 diagram of diagnosis & protection block 5.3.1 protection by o ver current shutdown the internal logic permanently monitors the load current i l . in the event of a load current exceeding the short circuit shutdown threshold ( i l > i l(sc) ), the output will switch off with a latchi ng behavior. during an over current shutdown, an overshooting i l(sc)peak may occur, depending on the short circuit impedances. for the case the device is in on state while short circ uit appears, the typical overshooting i l(sc)peak as a function of the steepness of the short circuit current d i sc /d t , see chapter 6.2.3 . for a detailed description of the latching behavior, please see chapter 5.3.3 . at lower supply voltages the current tripping level i l(sc) will decrease depending on the supply voltage. at v s = 4.7v, the current tripping level will be reduced to i l(sc)lv . please refer to figure 38 for typical current tripping level i l(sc) as a function of the supply voltage v s . diagnosis & protection diagnosisprotection .emf temp input circuit sense output i is(fault) 0 1 1 a gate driver undervoltage protection v s(uv) delay = t d( uv) no delay & intelligent latch t jt i l(sc) 1 qs qr open load at off v out(ol) enable vs out r out(gnd) 1 delay = t reset no delay timer reset no fault in no undervoltage
datasheet 16 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description 5.3.2 protection by over temperature shutdown the internal logic permanently monitors the junction temp erature of the output stage. in the event of an over temperature ( t j > t jt ) the output will immediately switch off with a latchi ng behavior, see chapter 5.3.3 for details. 5.3.3 infineon ? intelligent latch the BTS50060-1TEA provides infineon ? intelligent latch to avoid permanent resetting of a protective, latched switch off caused by over current shutdown or over temperature shutdown) in pwm applications. to reset a latched protective switch o ff the fault has to be acknowledged by commanding the input low for a minimum duration of t reset . see figure 15 for details. figure 15 infineon ? intelligent latch - fault acknowledge and latch reset 5.3.4 reverse polarity protection reverse polarity condition is the mix- up of the power supply connections of the entire application. this means, application gnd connector is connected to positive supply voltage, while vs pin is connected to negative supply voltage or ground potential. see figure 16 and figure 53 . figure 16 reverse polarity condition t intelligentlatch.emf v in t i is i is(fault ) t over temperature / short circuit t v out t reset t reset i is(offset) latch reset latch reset load gnd revers.emf v s out - v s(rev) - i l r is r sense r input - i in logic
datasheet 17 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description under reverse polarity condit ion, the output stage can not block a cu rrent flow. it will conduct a load current via the intrinsic body diode. the current th rough the output stage has to be limited either by the load itself or by external circuitry, to avoid over heat ing of the power stage. power losses in the power stage during reverse polarity condition can be calculated by equation (3) : (3) additionally, the current into the logic pins has to be limited to the maximum current described in chapter 4.1 with an external resistors. figure 53 shows a typical application. resistors r input and r sense are used to limit the current in the logic of the device and in the esd protection stage. the recommended value for r input = r sense = 10k ? . as long as |- v s(rev) | < 16v, the current through the gnd pin of the device is blocked by an internal diode. 5.3.5 protection during loss of ground in case of loss of the module ground or device ground connection (gnd pin) the device protects itself by automatically turning off (whe n it was previously on) or remains off (even if the load remains connected to ground), regardless if the input is driven high or low. in case gnd recovers the device may need a reset via the in pin to return to normal operation. 5.3.6 protection during loss of load or loss of v s condition in case of loss of load with charged primary inductances the maximum supply voltage has to be limited. it is recommended to use a z-diode, a varistor ( v za < 40v) or v s clamping power switches with connected loads in parallel. in case of loss of a charged inductive load, disturbances on pin out may require a reset on in pin for the device to regain normal operation. in case of loss of v s connection with charged inductive loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. it is recommended to use a diode, a z-diode or a varistor ( v zb < 16v, v zl + v d < 16v). for higher clamp voltages currents through all pins have to be limited according to the maximum ratings. please see figure 17 and figure 18 for details. figure 17 loss of v s p rev i lrev () ? () v sd rev () ? () = lossofvs.emf v d v zl load v zb load v za gnd logic v s out sm ar t clamping gnd logic v s out sm ar t clamping
datasheet 18 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description figure 18 loss of load 5.3.7 protection during esd or over voltage condition all logic pins have esd protection. a dedicated clamp me chanism protects the logic ic against transient over voltages. see figure 19 for details. figure 19 over voltage protection in the case ( v s > max v s(sc) )&( v s < v sd(cl) ), the output transistor is still operational and fo llows the input. parameters are no longer warranted and lifetime is redu ced compared to normal mode. this specially impacts the short circuit robustness, as well as the maximum energy e as the device can handle. the BTS50060-1TEA provides infineon ? smart clamping functionality, wh ich suppresses non nominal over voltages by actively clamping the over voltage across the power stage and the load. this is achieved by controlling the clamp voltage v sd(cl) depending on the junction temperature t j and the load current i l . see figure 14 for details. please refer also to chapter 5.1.2 . v zb load v za lossofload.emf gnd logic v s out sm ar t clamping esd protection is overvoltageprotection.emf v s over voltage protection v z(ic) in out gnd
datasheet 19 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description 5.4 diagnosis functions for diagnosis purpose, the BTS50060-1TEA provides an advanced analog sense signal at the pin is. for an overview of the diagnosis func tions, you may have a look at figure 14 ? diagram of diagnosis & protection block ?. 5.4.1 sense output the current sense output is a cu rrent source driving a signal i is proportional to the load current (see equation (5) ) as long as no ?hard? failure mode occurs (short circuit to gnd / over temperature) and v sis = v s - v is > 3v. it is activated and deactivated by the input signal. us ually, in the applicatio n a pull-down resistor r is is connected between the current sense pin is and gnd pin. a typical value is r is = 1.0 k ? . figure 53 shows a simplified application setup. table 5 is giving a quick reference for the logic / anal og state of the is pin during device operation. in case a short circuit or an over temperature condition is detected, the sense output is supplying a fault signal i is(fault) . the fault signal is reset by an input signal being low for t > t reset . as long as an open load, short-to- v s or inverse operation is detected while the device is in off state, the sense output al so supplies the fault signal i is(fault) . the timings and logic of the is pin is described in figure 20 . during output turning on or off, the sense signal is invalid. table 5 truth table for sense signal operation mode input level output level sense output normal operation high 1) 1) high: v in = v in(h) v out = v s - r ds(on) * i l i is = ( i l / k is ) + i is(offset) low 2) for t < t reset 2) low: v in = v in(l) v out ~ gnd ( v out < v out(oll) ) i is = i is(offset) low for t > t reset z 3) ( i is = i is(ll) ) 3) z: high impedance inverse operation high v out > v s i is i is(offset) low for t < t reset i is = i is(offset) low for t > t reset i is = i is(fault) after short circuit to gnd or over temperature detection high or low for t < t reset v out ~ gnd i is = i is(fault) low for t > t reset z ( i is = i is(ll) ) short circuit to v s high v out = v s i is i is(offset) low for t < t reset i is = i is(offset) low for t > t reset i is = i is(fault) open load high v out = v s i is i is(offset) low for t < t reset v out > v out(olh) 4) 4) can be achieved e.g. with external pull up resistor r ol , see figure 53 . i is = i is(offset) low for t > t reset i is = i is(fault)
datasheet 20 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description figure 20 sense output timing figure 21 shows the current sense as a function of the load current in the power dmos. the curves represent the minimum and maximum values for the sense current, as well as the ideal sense current, assuming an ideal k is factor value as well as an ideal i is(offset) . figure 21 sense current as a function of the load current ( v sis > 3v) the sense current can be calculated out of the load current by the following equation (4) : (4) or, vice versa, the load current can be calc ulated out of the sense current by following equation (5) : (5) t t currentsensetiming.emf v in i l t i is 90% ( i is static - i is offset ) t sis(on) t sis (off) t sis (lc) t sis (lc) t reset i is(offset) 10% ( i is static - i is offset ) 0 2 4 6 8 10 0 20406080100 i l [a] i is [ma] max i is(fault) typ i is(fault) min i is(fault) max i l(sc) max i is typ i is min i is min i l(sc) typ i l(sc) i is 1 k -- - is i l i is offset () + = i l k is i is i is offset () ? () =
datasheet 21 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description for definition of k is , the following equation (6) is used: (6) i l1 and i l2 are two different load currents, i is(il1) and i is(il2) are the corresponding sense currents. 5.4.2 enhancing accuracy of the sense output by e nd of line calibration for some applications it may be necessary to measure th e load current with very high accuracy. to increase the device accuracy, different methods can be used, e.g. single point calibration or dual point calibration. the variance of the sense current at a certain load current depends on the variance of the factor k is as well as on the variance of the offset current i is(offset) . the temperature variance of the factor k is over the temperature range is described with the parameter ? k is,temp . (7) the variance of the sense current offset over the temperature range is defined as shown in equation (8) : (8) 5.4.3 short-to-battery detection / open load detection in off state the BTS50060-1TEA provides open load diagnosis in off st ate. this is achieved by monitoring the out voltage. the open load at off di agnosis is activated if v in = low for t > t reset . an open load or short-to-battery is detected if v out > v out(olh) . to provoke this condition during open load, it may be necessary to use an external pull up resistor r ol (see figure 53 ). in case of detecting a shorted load to battery, open load, or inverse operation in off state, the pin is provides a defined fault current i is(fault) . if v out drops below v out(oll) , or v in is set to high, the fault signal is removed. figure 22 shows the behavior of the open load at off diagnosis. figure 51 and figure 52 provide the typical behavior of v out(olh) and v out(oll) as a function of the supply voltage and junction temperature. the device internally connect s out with gnd pin with an effective resistor r out(gnd) . in case the application provides high leakage current outside of the BTS50060-1TEA between vs and out, it may be necessary to use an external resistor r l_ol to disable open load detection. figure 53 gives an example of external circuitry for enabling / disabling open load detection in off state. k is i l1 i l2 ? i is i l1 () i is i l2 () ? -------------------------------------------- = ? k is temp () max k is 40 c ? () k is 25 c () ? k is 150 c () k is 25 c () ? ; [ ] = ? i is offset () max i is offset () 40 c ? () i is offset () 25 c () ? i is offset () 150 c () i is offset () 25 c () ? ; [ ] =
datasheet 22 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA functional description figure 22 open load detection in off state 5.5 undervoltage shutdown & restart the BTS50060-1TEA switches off whenever v s drops below v s(uv)off . the device restarts automatically after the supply voltage increases to a sufficient level ( v s > v s(uv)on ) and a delay time of t delay(uv) , if the input pin in is high. please see figure 23 for details. the fault signal is reset if v s is below v s(uv) for more than typ. 70s. figure 23 undervoltage shutdown and restart openload _at_off.emf v out t i is ? v out(ol) v out(oll ) v out(olh ) t i is(ll) i is(fault) undervoltage .emf v s t v out t delay(uv) ? v s(uv) on v s(uv)off v s(uv)on z t t v in high
datasheet 23 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA 6 electrical character istics BTS50060-1TEA 6.1 electrical characteristics table table 6 electrical characteristics: BTS50060-1TEA v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max. operating currents standby current for whole device with load t j = 25c i s(off)_25 1) ?58a v in = low for t > t reset , v s = 13.5v, t j = 25c v out < v out(oll) p_6.1 standby current for whole device with load t j = 85c i s(off)_85 1) ?58a v in = low for t > t reset , v s = 13.5v, t j = 85c v out < v out(oll) p_6.2 standby current for whole device with load t j = 150c i s(off)_150 ?2060a v in = low for t > t reset , v s = 13.5v, t j = 150c v out < v out(oll) , p_6.3 ground current during on i gnd(on) ?35ma v in = high t > t on p_6.4 supply current during open load detection in off state i s(ol) 1) ?1215ma v in = low for t > t reset , v out > v out(olh) p_6.5 power stage on-state resistance r ds(on)_25 1) ?6.8?m ? v in = high, t j = 25 c, v s = 13.5v, i l = +/-13.5a p_6.6 on-state resistance r ds(on)_150 ?1012m ? v in = high, t j = 150 c, v s = 13.5v, i l = +/-13.5a p_6.7 on-state resistance r ds(8v)_25 1) ?8?m ? v in = high, t j = 25 c, v s = 8v, i l = +/-13.5a p_6.8 on-state resistance r ds(8v)_150 1) ?11.515m ? v in = high, t j = 150 c, v s = 8v, i l = +/-13.5a p_6.9
datasheet 24 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA on-state resistance at low supply voltage r ds(uv)_25 1) ?10.5?m ? v in = high, t j = 25 c, v s = 4.7v, i l = +/-13.5a p_6.10 on-state resistance at low supply voltage r ds(uv)_150 ?1925m ? v in = high, t j = 150 c, v s = 4.7v, i l = +/-13.5a p_6.11 body diode forward voltage drop 2) -v sd(rev) 1) 300 600 1000 mv v in = low, i l = -13.5a (see figure 12 and figure 16 ) p_6.12 output leakage current 3) i l(off)_25 1) ?0.11a t j = 25c, v in = low, v out = 0v p_6.13 output leakage current i l(off)_85 1) ?0.11a t j = 85c, v in = low, v out = 0v p_6.14 output leakage current i l(off)_150 ?160a t j = 150c, v in = low, v out = 0v p_6.15 switching a resistive load slew rate 30% to 70% v s (d v /d t ) on 0.12 0.18 0.36 v/s r l = 1 ? , v s = 13.5v (see figure 10 for definitions and figure 29 to figure 35 for parameter dependencies) p_6.16 slew rate 70% to 30% v s -(d v /d t ) off 0.12 0.18 0.36 v/s p_6.17 slew rate matching (d v /d t ) on - |(d v /d t ) off | ? d v /d t -0.15 - 0.15 v/s p_6.18 turn on time to 90% v s t on ? 80 130 s p_6.19 turn off time to 10% v s t off ? 100 150 s p_6.20 turn on/off matching t on - t off -70 -20 30 s p_6.21 turn on rise time 10% to 90% v s t r 30 60 90 s p_6.22 turn off fall time 90% to 10% v s t f 30 60 90 s p_6.23 switch on energy e on 1) 1.1 2.4 3.6 mj p_6.24 switch off energy e off 1) 1.1 2.4 3.6 mj p_6.25 switching an inductive load output voltage drop limitation 4) v sd(cl)_25 1) 32 40 ? v t j = 25c, i l = 40ma, p_6.26 output voltage drop limitation v sd(cl)_150 1) 40 48 ? v t j = 150c, i l = 13.5a, p_6.27 input circuitry table 6 electrical characteristics: BTS50060-1TEA (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 25 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA low level input voltage v in(l) -0.3 ? 0.8 v ? p_6.28 high level input voltage v in(h) 2.0 ? 6 v ? p_6.29 input voltage hysteresis ? v in 1) ? 200 ? mv ? p_6.30 input pull down resistor r in 50 100 200 k ? ?p_6.31 protection short circuit shutdown threshold i l(sc) 60 75 95 a 8v < v s < 19v p_6.32 short circuit shutdown threshold at low supply voltage i l(sc)lv 1) 10 ? i l(sc) a4.7v < v s < 8v p_6.33 thermal shutdown temperature t jt 150 175 1) 200 1) c ? p_6.34 latch reset time t reset 1) 40 55 80 ms v in = low 6v < v s < 28v p_6.35 output leakage current while gnd disconnected 5) i out(gnd) 1) 00.51.0ma v s = v s(ext) , gnd pin disconnected p_6.40 over voltage protection of logic ic v z(ic) 45 50 ? v i gnd = 5ma p_6.41 sense output sense current steepness (reciprocal) k is 10.5 13 15 k see equation (6) i l1 = 13.5a, i l2 = 0a, v s - v is > 3v p_6.42 k is temperature variance ? k is(temp) 1) -2 0 +2 % p_6.43 sense current i l = i l1 i is(l1) 0.95 1.28 1.88 ma i l = 13.5a, v s - v is > 3v p_6.44 sense current offset i is(offset) 50 240 600 a v s - v is > 3v p_6.46 sense current offset temperature variance ? i is(offset) 1) -100 0 100 a see equation (8) p_6.47 leakage current at sense output i is(ll) 00.11a v in = low for t > t reset , v out < v out(oll) p_6.48 fault signal current at sense output i is(fault) 6.5 7.5 9 ma 6) v s - v is > 3v p_6.49 current sense settling time for turn on to 90% i is t sis(on) 1) 090300s v s = 13.5v, r l = 1.0 ? , r is = 1.0k ? , c sense < 100pf, see figure 20 p_6.50 current sense settling time for turn off to 10% i is t sis(off) 1) 0 110 300 s p_6.51 current sense settling time matching t sis(on) - t sis(off) 1) -70 -20 30 s p_6.52 table 6 electrical characteristics: BTS50060-1TEA (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 26 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA current sense settling time after changes of the load current i l t sis(lc) 1) 012s v in = high, i l = 1a ? 50a r is = 1.0k ? , c sense < 100pf, see figure 20 p_6.53 turn on current sense settling time to i is(fault) in case of short circuit t sis(fault) 1) 0 100 250 s r is = 1.0k ? , c sense < 100pf, see figure 15 p_6.54 open load at off output voltage threshold for open load detection in off state v out(olh) 55.56v v in = low, for t > t reset , v s = 13.5v, see figure 22 , figure 51 and figure 52 p_6.55 output voltage threshold for resetting open load detection in off state v out(oll) 4.5 5 5.5 v p_6.56 output voltage hysteresis for open load detection in off state ? v out(ol) 1) ? 500 ? mv p_6.57 intrinsic output pull-down resistance r out(gnd) 1) ?150?k ? v out = 4.5v, v in = low, for t > t reset p_6.63 undervoltage shutdown and restart undervoltage turn on voltage v s(uv)on ?4.44.7v v s increasing, v in = high p_6.58 undervoltage turn off voltage v s(uv)off ?4.14.4v v s decreasing, v in = high p_6.59 undervoltage turn on/off hysteresis ? v s(uv) 1) ?0.25?v v s(uv)on - v s(uv)off , v in = high p_6.60 undervoltage restart delay time t delay(uv) 468ms v in = high p_6.61 1) not subject to production test, specified by design 2) please note - during on state, the output voltage drop in invers e current operation is defined by v sd(rev) = r ds(on) x i l 3) see figure 27 for typical temperature dependency. 4) see figure 36 for typical temperature dependency. 5) all pins disconnected except for v s and out 6) valid after over temperature or s hort ciruit to ground until reset (t > t reset , v in = low, or undervoltag e detection) or during detection of open load in off state. table 6 electrical characteristics: BTS50060-1TEA (cont?d) v s = 6v to 19v , t j = -40c to 150c , all voltages with respect to ground , positive current flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition number min. typ. max.
datasheet 27 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA 6.2 parameter dependencies 6.2.1 power stage figure 24 typical standby current i s(off) as a function of the junction temperature t j v s = 13.5v, v in = low for t > t reset figure 25 typical on state resistance r ds(on) as a function of the junction temperature t j v s = 13.5v, i l = 13.5a, v in = high figure 26 typical on state resistance r ds(on) as a function of the supply voltage v s t j = 25c, i l = 13.5a, v in = high figure 27 typ. output leakage current i l(off) as a function of the junction temperature t j v s = 13.5v, v in = low 0 2 4 6 8 10 12 0 5 10 15 20 25 30 v s [v] r ds(on) [mohm]
datasheet 28 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA figure 28 typical body diode forward voltage drop - v sd(rev) as a function of the junction temperature t j i l = -4a, v in = low figure 29 typical slew rate (d v /d t ) on and (d v /d t ) off as a function of the supply voltage v s t j = 25c , r l = 1 ? figure 30 typical turn on time t on and turn off time t off as a function of the junction temperature t j v s = 13.5v, r l = 1 ? figure 31 typical turn on time t on and turn off time t off as a function of the load resistance r l v s = 13.5v, t j = 25c ?
datasheet 29 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA figure 32 typical turn on time t on and turn off time t off as a function of the supply voltage v s t j = 25c, r l = 1 ? figure 33 typical switch on energy e on and switch off energy e off as a function of the junction temperature t j v s = 13.5v, r l = 1 ? figure 34 typical switch on energy e on and switch off energy e off as a function of the load resistance r l v s = 13.5v, t j = 25c figure 35 typical switch on energy e on and switch off energy e off as a function of the supply voltage v s t j = 25c, r l = 1 ? ?
datasheet 30 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA 6.2.2 input circuit figure 36 typical output voltage drop limitation v sd(cl) as a function of the junction temperature t j i l = 40ma, v in = low figure 37 typ. input pull down resistor r in as a function of the junction temperature t j
datasheet 31 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA 6.2.3 protection functions figure 38 typical short circuit shutdown threshold as a function of the supply voltage v s ; t j = 25c figure 39 typical short circuit shutdown threshold as a function of the junction temperature t j ; v s = 13.5v figure 40 typical short circuit overshooting as a function of the d i sc /d t (device is in on state when short circuit appears) t j = 25c 0 20 40 60 80 100 120 0.1 1 10 100 d i l /d t [a/s] i peak,sc [a]
datasheet 32 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA 6.2.4 diagnosis functions figure 41 typical sense current slope k is as a function of the junction temperature t j v s = 13.5v, i l1 =13.5a, i l2 =0a, v in =high figure 42 typical sense current slope k is as a function of the supply voltage v s t j = 25c, i l1 =13.5a, i l2 =0a, v in = high figure 43 typical sense current slope k is as a function of the load current i l1 v s = 13.5v, t j = 25c, i l2 =0a, v in = high figure 44 typical sense current offset i is(offset) as a function of the junction temperature t j v s = 13.5v, v in = high 0 50 100 150 200 250 300 -50 0 50 100 150 t j [c] i is(offset) [a]
datasheet 33 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA figure 45 typical sense current offset i is(offset) as a function of the supply voltage v s t j = 25c, v in = high figure 46 typical leakage current i is(ll) at the sense output as a function of the junction temperature t j v s = 13.5v, v in = low for t > t reset figure 47 typical leakage current i is(ll) at the sense output as a function of the supply voltage v s t j = 25c, v in = low for t > t reset figure 48 typical fault current i is(fault) at the sense output as a function of the voltage v sis = v s - v is v s = 13.5v, v in = high 0 0.05 0.1 0.15 0.2 0.25 -50 0 50 100 150 t j [c] i is(ll) [a]
datasheet 34 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA electrical characteristics BTS50060-1TEA figure 49 typical current sense settling time for turn on t sis(on) and turn off t sis(off) as a function of the load resistance r l v s = 13.5v, t j = 25c figure 50 typical current sense settling time for turn on t sis(on) and turn off t sis(off) as a function of the supply voltage v s t j = 25c, r l = 1 ? figure 51 typical output voltage thresholds for open load detection during off v out(olh) and v out(oll) as a function of the supply voltage v s t j = 25c figure 52 typical output voltage thresholds for open load detection during off v out(olh) and v out(oll) as a function of the junction temperature t j v s = 13.5v ? 0 2 4 6 8 10 0102030 v s [v] v out(oll) , v out(olh) [v] vout(olh) vout(oll) 0 2 4 6 8 10 -50 0 50 100 150 t j [v] v out(oll) , v out(olh) [v] vout(olh) vout(oll)
datasheet 35 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA application information 7 application information note: the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. figure 53 application diagram with exernal circuitry supporting open load detection in off state figure 54 application diagram without external circuitry supporting open load detection in off state note: these are very simplified examples of an applicatio n circuit. the function must be verified in the real application. table 7 typical application parameter 1) 1) values are calculated and not subject to production test. parameter symbol typical values note / condition range of typical pwm frequencies f pwm 0 hz ... 300 hz <1khz duty cycle = 0%, 5% ... 95% duty cycle = 0%, 15% ... 85% nominal load current i l(nom) 16.5 a t a =85c, t j <150c, r thja = 22k/w dc operation typical load current at 100hz i l(100hz) 13.5 a 2) , t a = 85c, t j < 150c, r thja = 22k/w f pwm = 100hz, duty cycle = 95%, v s = 19v, 2) assuming a resistive load to be switched. typical load current at 300hz i l(300hz) 10 a 2) , t a = 85c, t j < 150c, r thja = 22k/w f pwm = 300hz, duty cycle = 95% v s = 19v, application_example_ol.emf in vs gnd r is 1k out r l gnd v bat +5v is c e.g. xc866 r sense r input 10k 10k r ol 3k3 r l_ol 33k t 1 application_example.emf in vs gnd r is 1k out r l gnd v bat +5v is c e.g. xc866 r sense r input 10k 10k
datasheet 36 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA application information 7.1 further application information ? please contact us for information regarding the pin fmea ? for further information you may visit http://www.infineon.com/ table 8 bill of material reference value purpose r input 10 k ? protection of the c during overvoltage and reverse battery condition r sense 10 k ? protection of the c during overvoltage and reverse battery condition r is 1 k ? sense resistor. shunt resistor for measuring i is by the c?s ad converter. external circuitry supporting open load at off detection t 1 bc807 switches the supply voltage for activa tion / deactivation of open load at off detection r ol 3.3k ? pull up resistor for open load detection in off state r l_ol 33k ? pull down resistor for deactivating open load detection in off state
datasheet 37 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA package outlines and parameters 8 package outlines and parameters figure 55 pg-to252-5-311 green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020). table 9 parameter value jedec humidity category acc. j-std-020-d msl3 jedec classification temperature acc. j-std-020-d 260c dimensions in mm
datasheet 38 rev. 1.1, 2011-04-13 high current profet tm BTS50060-1TEA revision history 9 revision history revision date changes ds v1.1 2011-04-13 chapter 4.1 footnote 4) splitted. footnote 6) added. equation (7) and equation (8) corrected. (150c) p_6.1 i s(off)_25 , p_6.2 i s(off)_85 and p_6.3 i s(off)_150 condition set to v s = 13.5v p_6.16 (d v /d t ) on and p_6.17 -(d v /d t ) off all values changed. figure 29 adapted. p_6.24 e on and p_6.25 e off all values changed. figure 33 , figure 34 and figure 35 adapted. p_6.46 i is(offset) , p_6.44 i is(l1) typical value and maximum limit changed. ds v1.0 2010-06-24 init ial datasheet version.
edition 2011-04-13 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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